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the load through the MOSFET. Depending on the output
impedance of the system and the parasitic inductance, the
reverse current in the MOSFET may exceed the source
pulsed current rating (60A) before the PI2126 MOSFET is
turned off.
The peak current during an input short condition is
calculated as follows, assuming that the output has very
low impedance and it is not a limiting factor:
Where:
: Avalanche energy
: MOSFET breakdown voltage (30V)
Power dissipation:
In Active ORing circuits the MOSFET is always on in steady
state operation and the power dissipation is derived from
the total source current and the on-state resistance of the
MOSFET.
The PI2126 internal MOSFET power dissipation can be
Where:
:
Peak current in PI2126 MOSFET before it is
calculated with the following equation:
turned off.
Where:
:
Input voltage or load voltage at S pin before
: MOSFET power dissipation
input short condition did occur.
:
Source Current
:
Reverse fault to MOSFET turn-off time.
:
MOSFET on-state resistance
: Circuit parasitic inductance
The high peak current during an input short stores energy
in the circuit parasitic inductance, and as soon as the
Note: For the worst case condition, calculate with
maximum rated R DS(on) at the MOSFET maximum operating
junction temperature because R DS(on) value is directly
MOSFET turns off, the stored energy will be released and
proportional to temperature.
Refer to Figure 10 for
this will produce a high negative voltage and ringing at the
MOSFET source. At the same time the energy stored at the
drain side of the internal MOSFET will be released and
produce a voltage higher than the load voltage. This event
will create a high voltage difference between the drain and
source of the MOSFET. The MOSFET may avalanche, but
this avalanche will not affect the MOSFET performance
because the PI2126 has a fast response time to the input
normalized R DS(on) values over temperature. The PI2126
maximum R DS(on) at 25°C is 6m Ω and will increase by 4 0% at
125°C junction temperature.
The Junction Temperature rise is a function of power
dissipation and thermal resistance.
Where:
fault condition and the stored energy will be well below
:
Junction-to-Ambient thermal resistance, 46°C/W
the MOSFET avalanche capability .
MOSFET avalanche during input short is calculated as
follows:
This may require iteration to get to the final junction
temperature. Figure 13 and Figure 14 show the PI2126
internal MOSFET final junction temperature curves versus
conducted current at maximum R DS(on) , given ambient
temperatures and air flow.
Picor Corporation ? picorpower.com
PI2126
Rev 1.1
Page 11 of 15
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